inchange semiconductor isc product specification isc silicon npn power transistor MJE180 description collector?emitter sustaining voltage : v ceo(sus) = 40 v dc current gain : h fe = 30(min) @ i c = 0.5 a = 12(min) @ i c = 1.5 a complement to type mje170 applications low power audio amplifier low current high speed sw itching applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 40 v v ebo emitter-base voltage 7 v i c collector current-continuous 3 a i cm collector current-peak 6 a i b b base current 1 a collector power dissipation t a =25 1.5 p c collector power dissipation t c =25 12.5 w t i junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 10 /w r th j-a thermal resistance,junction to ambient 83.4 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor MJE180 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c = 10ma; i b = 0 40 v v ce (sat)-1 collector-emitter saturation voltage i c = 0.5 a ;i b = 50ma 0.3 v v ce (sat)-2 collector-emitter saturation voltage i c = 1.5a ;i b = 0.15 a b 0.9 v v ce (sat)-3 collector-emitter saturation voltage i c = 3a ;i b = 0.6 a 1.7 v v be (sat)-1 base-emitter saturation voltage i c = 1.5a; i b = 0.15a 1.5 v v be (sat)-2 base-emitter saturation voltage i c = 3a; i b = 0.6a b 2.0 v v be (on) base-emitter on voltage v ce = 1v ; i c = 0.5a 1.2 v i cbo collector cutoff current v cb = 60v ; i e = 0 v cb = 60v ; i e = 0;t c = 150 0.1 0.1 a ma i ebo emitter cutoff current v eb = 7v; i c = 0 0.1 a h fe-1 dc current gain i c = 0.1 a ; v ce = 1v 50 250 h fe-2 dc current gain i c = 0.5a ; v ce = 1v 30 h fe-3 dc current gain i c = 1.5 a ; v ce = 1v 12 f t current-gain?bandwidth product i c = 0.1 a; v ce = 10v; 50 mhz c ob collector capacitance i e = 0; v cb = 10v; f test = 0.1mhz 40 pf isc website www.iscsemi.cn
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